BF94N60L mosfet equivalent, n-channel mosfet.
z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching
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VDS Drain-Source Volta.
The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy p.
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