BF92N7002 datasheet, mosfet equivalent, BYD

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Features and benefits

z VDS =60 V z ID =300mA z RDS(ON) =2.8Ω TYP (VGS=10V) RDS(ON) =3.8Ω TYP (VGS=4.5V) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum .

Application

It is also intended for any applications with low gate drive requirements. Features z VDS =60 V z ID =300mA z RDS(ON) .

Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applicati.

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