BF92302N Datasheet, BYD

z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP.(VGS = 4.5V) RDS (on) = 60mΩ TYP.(VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum .

Features z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP.(VGS = 4.5V) RDS (on) = 60mΩ TYP.(V.

The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TY.

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