z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Pa.

It is also intended for any application with low gate drive requirement. Features z VDS =100 V z ID =100A z Typical RD.

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applicati.

BF910N60

BF910N60L

BF912N60

BF912N60L

BF91404

BF900

BF901

BF901R

BF9024SPD-M

BF9028DND-A

BF9028DND-GE

BF9028DNT

BF90315SNS

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