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BLM2006NE Datasheet, BELLING

BLM2006NE mosfet equivalent, n-channel enhancement mode power mosfet.

BLM2006NE Avg. rating / M : 1.0 rating-11

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BLM2006NE Datasheet

Features and benefits


* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.

Application

.It is ESD protested. General Features
* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Ra.

Description

The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Feature.

Image gallery

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TAGS

BLM2006NE
N-Channel
Enhancement
Mode
Power
MOSFET
BELLING

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