BLM2004NE mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =6A Typ.RDS(ON) = 17mΩ @ VGS=4.5V Typ.RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free p.
.It is ESD protested.
General Features
* VDS = 20V,ID =6A Typ.RDS(ON) = 17mΩ @ VGS=4.5V Typ.RDS(ON) = 22mΩ @ VGS=2.5.
The BLM2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Feature.
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