HMC998 Datasheet | Analog Devices

Features High P1d B Output Power: +31 d Bm High Psat Output Power: +33 d Bm High Gain: 12 d B High Output IP3: +41 d Bm Supply Voltage: Vdd = +10V to +15V @ 500 m A 50 Ohm Matched Input/Output Die Size: 2.99 x 1.84 x 0.1 mm General Description The HMC998 is a Ga As MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 12 d B of gain, +41 d Bm output IP3 and +31 d Bm of output power at 1 d B gain pression while requiring 500 m A from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998 amplifier I/Os are internally matched to 50 Ohms facilitating integration into mutli-chipmodules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 m A- Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range - 2 - 18 - 22 Gain Gain Flatness ±0.1 ±0.7 ±0.6 Gain Variation Over Temperature Input Return Loss -20 -20 -15 Output Return...