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HMC999 - GaN MMIC 10 WATT POWER AMPLIFIER

Description

The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz.

The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply.

Features

  • High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip.
  • Test Instrumentation.
  • Military Communications.
  • Jammers and Decoys.
  • Radar, EW & ECM Subsystems.
  • Space Functional Diagram General.

📥 Download Datasheet

Datasheet preview – HMC999

Datasheet Details

Part number HMC999
Manufacturer Hittite
File Size 680.72 KB
Description GaN MMIC 10 WATT POWER AMPLIFIER
Datasheet download datasheet HMC999 Datasheet
Additional preview pages of the HMC999 datasheet.

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Full PDF Text Transcription

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HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications The HMC999 is ideal for: Features High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip • Test Instrumentation • Military Communications • Jammers and Decoys • Radar, EW & ECM Subsystems • Space Functional Diagram General Description The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply.
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