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HMC737LP4 - MMIC VCO

Description

The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output.

Features

  • Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz Pout: +9 dBm Phase Noise: -105 dBc/Hz @ 100 kHz No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications The HMC737LP4(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz Pout: +9 dBm Phase Noise: -105 dBc/Hz @ 100 kHz No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2 General Description The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
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