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HMC737LP4E - MMIC VCO

Download the HMC737LP4E datasheet PDF. This datasheet also covers the HMC737LP4 variant, as both devices belong to the same mmic vco family and are provided as variant models within a single manufacturer datasheet.

Description

The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output.

Features

  • Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz Pout: +9 dBm Phase Noise: -105 dBc/Hz @ 100 kHz No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2 General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC737LP4-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Analog Devices

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HMC737LP4 MMIC VCO
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Full PDF Text Transcription

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HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications The HMC737LP4(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz Pout: +9 dBm Phase Noise: -105 dBc/Hz @ 100 kHz No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2 General Description The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
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