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HMC7229LS6 - Power Amplifier

Description

The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz.

Features

  • 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz HMC7229LS6 FEATURES 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.
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