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HMC7229 - Power Amplifier

Description

The HMC7229 is a four-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier with an integrated temperature compensated on-chip power detector, operating between 33 GHz and 40 GHz.

Features

  • 32 dBm PSAT with 22% PAE P1dB POUT: 31.5 dBm High OIP3: 39.5 dBm High gain: 24.5 dB 50 Ω matched input/output.

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Full PDF Text Transcription

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Data Sheet FEATURES 32 dBm PSAT with 22% PAE P1dB POUT: 31.5 dBm High OIP3: 39.5 dBm High gain: 24.5 dB 50 Ω matched input/output APPLICATIONS Point to point radios Point to multipoint radio VSAT and SATCOM 33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector HMC7229 GENERAL DESCRIPTION The HMC7229 is a four-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier with an integrated temperature compensated on-chip power detector, operating between 33 GHz and 40 GHz. The HMC7229 provides a typical range of 23 dB to 24.
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