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HMC606 - GaAs InGaP HBT MMIC

Description

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz.

With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.

Features

  • Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm Functional Diagram General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC606 is ideal for: • Radar, EW & ECM • Microwave Radio • Test Instrumentation • Military & Space • Fiber Optic Systems Features Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm Functional Diagram General Description The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz.
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