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HMC606LC5 - Distributed Amplifier

Description

The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz.

Features

  • Ultralow phase noise:.
  • 160 dBc/Hz typical at 10 kHz Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range Supply voltage: 5.0 V at 64 mA typical 50 Ω matched input/output 32-terminal, ceramic, leadless chip carrier (LCC).

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Full PDF Text Transcription

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Data Sheet GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz HMC606LC5 FEATURES Ultralow phase noise: −160 dBc/Hz typical at 10 kHz Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range Supply voltage: 5.
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