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HMC326MS8G - GaAs InGaP HBT MMIC DRIVER AMPLIFIER

Description

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AMPLIFIERS - DRIVER & GAIN BLOCK - SMT v11.1019 Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: • Microwave Radios • Broadband Radio Systems • Wireless Local Loop Driver Amplifier HMC326MS8G / 326MS8GE GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Features Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
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