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HMC326MS8GE - GaAs InGaP HBT MMIC DRIVER AMPLIFIER

Download the HMC326MS8GE datasheet PDF (HMC326MS8G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas ingap hbt mmic driver amplifier.

Description

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC326MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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AMPLIFIERS - DRIVER & GAIN BLOCK - SMT v11.1019 Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: • Microwave Radios • Broadband Radio Systems • Wireless Local Loop Driver Amplifier HMC326MS8G / 326MS8GE GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Features Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
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