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AF9435P Datasheet Preview

AF9435P Datasheet

P-Channel 30-V (D-S) MOSFET

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AF9435P pdf
P-Channel 30-V (D-S) MOSFET
AF9435P
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended VGS range (±25) for battery pack
applications
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.
Product Summary
VDS (V)
-30
rDS(on) (m)
49@VGS=-10V
69@VGS=-4.5V
ID (A)
-5.7
-5.0
Pin Assignments
S1
S2
S3
G4
SOP-8
8D
7D
6D
5D
Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
Ordering information
A X 9435P X X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/5



Anachip
Anachip

AF9435P Datasheet Preview

AF9435P Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

AF9435P pdf
P-Channel 30-V (D-S) MOSFET
AF9435P
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TA=25ºC
TA=70ºC
Continuous Source Current (Diode Conduction) (Note 1)
Power Dissipation (Note 1)
TA=25ºC
TA=70ºC
Operating Junction and Storage Temperature Range
Rating
-30
±25
±6.5
±5.2
±30
-1.6
3.1
2.0
-55 to 150
Thermal Resistance Ratings
Units
V
V
A
A
A
W
ºC
Symbol
Parameter
RθJC Maximum Junction-to-Case (Note 1)
RθJA Maximum Junction-to-Ambient (Note 1)
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
t < 5 sec
t < 5 sec
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Static
V(BR)DSS
VGS(th)
IGSS
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current (Note 3)
rDS(on) Drain-Source On-Resistance (Note 3)
gfs Forward Tranconductance (Note 3)
VSD Diode Forward Voltage
Dynamic (Note 4)
VGS=0V, ID=-250uA
VDS= VGS, ID=-250uA
VDS=0V, VGS=±25V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V,
TJ=55ºC
VDS=-5V, VGS=-10V
VGS=-10V, ID=-5.7A
VGS=-4.5V, ID=-5.0A
VGS=-10V, ID=-5.7A,
TJ=55ºC
VDS=-15V, ID=-5.7A
IS=-2.1A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching
VDS=-15V, VGS=-4.5V,
ID=-5.7A
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall-Time
Note 3: Pulse test: PW < 300us duty cycle < 2%.
VDD=-15, RL=15,
ID=-1A, VGEN=-10V,
RG=6
Note 4: Guaranteed by design, not subject to production testing.
Maximum
25
40
Units
ºC/W
ºC/W
Limits
Min. Typ. Max.
Unit
-30 - - V
-1 -1.6 -3
V
- - ±100 nA
- - -1
- - -5 uA
-30 - - A
- 38 49
- 54 69 m
- 42 54
- 19 -
S
-
-0.7 -1.2
V
- 6 11
- 2.0 - nC
- 2.7 -
- 7 14
-
-
13
14
24
25
nS
- 9 17
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
2/5


Part Number AF9435P
Description P-Channel 30-V (D-S) MOSFET
Maker Anachip
Total Page 5 Pages
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