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AF9412N Datasheet Preview

AF9412N Datasheet

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET
AF9412N
„ Features
„ General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for using in the power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery chargers, telecommunication power
systems, and telephone power systems.
„ Product Summary
VDS (V)
30
rDS(on) (m)
22@VGS=10V
36@VGS=4.5V
ID (A)
9.0
7.0
„ Pin Assignments
S1
S2
S3
G4
SOP-8
8D
7D
6D
5D
„ Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 9412N X X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 15, 2004
1/5




Anachip

AF9412N Datasheet Preview

AF9412N Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

N-Channel 30-V (D-S) MOSFET
AF9412N
„ Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TA=25ºC
TA=70ºC
Continuous Source Current (Diode Conduction) (Note 1)
Power Dissipation (Note 1)
TA=25ºC
TA=70ºC
Operating Junction and Storage Temperature Range
Rating
30
±20
9.4
7.4
30
1.6
3.1
2.2
-55 to 150
„ Thermal Resistance Ratings
Units
V
V
A
A
A
W
ºC
Symbol
Parameter
RθJC Maximum Junction-to-Case (Note 1)
RθJA Maximum Junction-to-Ambient (Note 1)
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
t 5 sec
t 5 sec
„ Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Static
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 3)
Drain-Source On-Resistance
(Note 3)
Forward Transconductance
(Note 3)
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VDS=0V, VGS=20V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=55ºC
VDS=5V, VGS=10V
VGS=10V, ID=9.2A
VGS=4.5V, ID=8A
VGS=10V, ID=9.2A, TJ=55ºC
VDS=15V, ID=9.2A
VSD Diode Forward Voltage
Dynamic (Note 4)
IS=2.3A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching
VDS=15V, VGS=4.5V,
ID=7A
td(on) Turn-On Delay Time
tr Rise Time
VDD=25V, RL=25, ID=1A,
td(off) Turn-Off Delay Time
VGEN=10V
tf Fall-Time
trr
Source-Drain Reverse Recovery
Time
IF=2.3A, Di/Dt=100A/uS
Note 3: Pulse test: PW 300us duty cycle 2%.
Note 4: Guaranteed by design, not subject to production testing.
Maximum
25
40
Units
ºC/W
Min.
Limits
Typ.
Max.
Unit
30 -
-V
1 1.95 3.0 V
- - ±100 nA
-
-
-
-
1
25
uA
20 -
-A
- 17 22
- 29 36 m
- 20 27
- 40 - S
- 0.7 1.1 V
- 4.7 8
- 1.7 - nC
- 1.4 -
- 16 21
-
-
5
23
10
37
nS
- 36
- 41 80 nS
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 15, 2004
2/5


Part Number AF9412N
Description N-Channel 30-V (D-S) MOSFET
Maker Anachip
Total Page 5 Pages
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