Datasheet Details
| Part number | BLS7G3135LS-350P |
|---|---|
| Manufacturer | Ampleon |
| File Size | 383.91 KB |
| Description | LDMOS S-band radar power transistor |
| Datasheet |
 BLS7G3135LS-350P Datasheet
|
|
|
General Description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Key Features
- Easy power control.
- Integrated ESD protection.
- High flexibility with respect to pulse formats.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (3.1 GHz to 3.5 GHz).
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.
