Datasheet4U Logo Datasheet4U.com

BLS7G3135LS-200 - LDMOS S-band radar power transistor

Datasheet Summary

Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use (input and output).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLS7G3135LS-200

Datasheet Details

Part number BLS7G3135LS-200
Manufacturer Ampleon
File Size 299.78 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS7G3135LS-200 Datasheet
Additional preview pages of the BLS7G3135LS-200 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 32 200 12 48 8 6 3.3 32 200 12 46 8 6 3.5 32 200 12 43 8 6 1.
Published: |