BLF888DS transistor equivalent, power ldmos transistor.
* High efficiency
* High power gain
* Excellent ruggedness (VSWR 40 : 1 through all phases)
* Excellent thermal stability
* Integrated ESD protectio.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Appli.
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information RF performance at VDS = 50 V i.
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