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BLF888DS - Power LDMOS transistor

Download the BLF888DS datasheet PDF (BLF888D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power ldmos transistor.

Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Excellent thermal stability.
  • Integrated ESD protection.
  • One Doherty design covers the.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF888D-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF888DS
Manufacturer Ampleon
File Size 357.79 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF888DS Datasheet

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Full PDF Text Transcription

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BLF888D; BLF888DS UHF power LDMOS transistor Rev. 4 — 18 February 2016 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.
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