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BLF881S Datasheet UHF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

Download the BLF881S datasheet PDF. This datasheet also includes the BLF881 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BLF881_NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 140 W from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Overview

BLF881; BLF881S UHF power LDMOS transistor Rev.

01 — 10 December 2009 Preliminary data sheet 1.

Product profile 1.

Key Features

  • www. DataSheet4U. com.
  • 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 dB ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion =.
  • 34 dBc.
  • DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 33 W ‹ Power gain = 21 dB ‹ Drain efficiency = 34 % ‹ Shoulder distance.

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