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BLF7G24L-160P - Power LDMOS transistor

General Description

160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G24L-160P
Manufacturer Ampleon
File Size 410.25 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G24L-160P Datasheet

Full PDF Text Transcription for BLF7G24L-160P (Reference)

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BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor ...

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Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5 45.5[1] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.