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BLF7G20LS-250P - Power LDMOS transistor

Download the BLF7G20LS-250P datasheet PDF. This datasheet also covers the BLF7G20L-250P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High-efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (1805 MHz to 1880 MHz).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G20L-250P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF7G20LS-250P
Manufacturer Ampleon
File Size 451.12 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G20LS-250P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1900 28 70 18 35 29.5[1] [1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. 1.
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