Download the BLF7G20LS-200 datasheet PDF.
This datasheet also covers the BLF7G20L-200 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Key Features
Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for broadband operation (1805 MHz to 1990 MHz).
Lower output capacitance for improved performance in Doherty.
Full PDF Text Transcription for BLF7G20LS-200 (Reference)
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BLF7G20LS-200. For precise diagrams, and layout, please refer to the original PDF.
BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor fo...
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roduct profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 18 33 29 [1] [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.
BLF7G20LS-200 Datasheet
