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BLF7G10LS-250 Datasheet, Ampleon

BLF7G10LS-250 transistor equivalent, power ldmos transistor.

BLF7G10LS-250 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 403.59KB)

BLF7G10LS-250 Datasheet
BLF7G10LS-250
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 403.59KB)

BLF7G10LS-250 Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (869 MHz to 960.

Application

at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7..

Description

250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz.

Image gallery

BLF7G10LS-250 Page 1 BLF7G10LS-250 Page 2 BLF7G10LS-250 Page 3

TAGS

BLF7G10LS-250
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

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