BLF7G10L-250 transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (869 MHz to 960.
at frequencies from 869 MHz to 960 MHz.
Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7..
250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.
Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz.
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