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AONP36320 - 30V Dual Asymmetric N-Channel MOSFET

Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Applications Motor Drive Buck-Boost Converters See Note I DFN3.3x3.3C AONP36320 30V Dual Asymmetric N-Ch

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General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • Motor Drive • Buck-Boost Converters • See Note I DFN3.3x3.3C AONP36320 30V Dual Asymmetric N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 100A 103A < 3.2mΩ < 3mΩ < 5.2mΩ < 5mΩ 100% UIS Tested 100% Rg Tested Top View Bottom View Pin 1 Pin 1 Orderable Part Number AONP36320 Package Type DFN3.3x3.