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AON4703 - 20V P-Channel MOSFET

General Description

excellent R DS(ON) and low gate charge.

blocking switch, or for buck converter applications.

Key Features

  • VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mW (VGS = -4.5V) RDS(ON) < 120mW (VGS = -2.5V) RDS(ON) < 160mW (VGS = -1.8V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON4703 20V P-Channel MOSFET General Description The AON4703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck converter applications. Features VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mW (VGS = -4.5V) RDS(ON) < 120mW (VGS = -2.5V) RDS(ON) < 160mW (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.