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AON4413 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AON4413 P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications.

Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -30V (VGS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -6V) D D D D G DFN 3x2 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -6.5 -5.3 -25 3.1 2.0 -55 to 150 -4.7 -3.7 1.6 1.0 W °C Junction and Storage Temperat.

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