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AON4413 - Field Effect Transistor

Description

The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications.

Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -30V (VGS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -6V) D D D D G DFN 3x2 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -6.5 -5.3 -25 3.1 2.0 -55 to 150 -4.7 -3.7 1.6 1.0 W °C Junction and Storage Temperat.

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Full PDF Text Transcription

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AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (VGS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -6V) D D D D G DFN 3x2 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -6.5 -5.3 -25 3.1 2.
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