900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alpha & Omega Semiconductors

AON3820 Datasheet Preview

AON3820 Datasheet

24V Dual N-Channel AlphaMOS

No Preview Available !

AON3820
24V Dual N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Applications
• Battery protection switch
• Mobile device battery charging and discharging
Product Summary
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=4.0V)
RDS(ON) (at VGS=3.7V)
RDS(ON) (at VGS=3.1V)
RDS(ON) (at VGS=2.5V)
Typical ESD protection
24V
8A
< 8.9mΩ
< 9.5mΩ
< 9.6mΩ
< 10mΩ
< 11.8mΩ
HBM Class 3A
Top View
DFN 3x3
Bottom View
Top View
D1 D2
Pin 1
Orderable Part Number
AON3820
S2 1
G2 2
S1 3
G1 4
Package Type
DFN 3x3
8 D1/D2
7 D1/D2
6
D1/D2
G1
5 D1/D2
G2
S1
S2
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
24
±12
8
6.2
32
2.0
1.3
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
50
70
30
Max
60
85
35
Units
°C/W
°C/W
°C/W
Rev.1.0: August 2015
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AON3820 Datasheet Preview

AON3820 Datasheet

24V Dual N-Channel AlphaMOS

No Preview Available !

AON3820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS=±10V
VDS=VGS, ID=250µA
VGS=4.5V, ID=8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.0V, ID=6A
VGS=3.8V, ID=6A
VGS=3.1V, ID=4A
VGS=2.5V, ID=4A
Forward Transconductance
VDS=5V, ID=8A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=4.5V, VDS=12V, ID=8A
VGS=4.5V, VDS=12V, RL=1.5,
RGEN=3
Min
24
0.5
5
7
5.1
5.2
5.4
6.2
Typ
0.9
7.1
10
7.3
7.4
7.8
9.0
70
0.65
1325
250
220
1.35
12.5
4.1
6.0
0.9
1.9
1.8
3.4
Max Units
V
1
µA
5
±10 µA
1.3 V
8.9
12.5
9.5
mΩ
9.6
10
11.8
S
1V
3A
pF
pF
pF
kΩ
20 nC
nC
nC
µs
µs
µs
µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2015
www.aosmd.com
Page 2 of 5


Part Number AON3820
Description 24V Dual N-Channel AlphaMOS
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
PDF Download

AON3820 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AON3820 24V Dual N-Channel AlphaMOS
Alpha & Omega Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy