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AON3810 Datasheet Preview

AON3810 Datasheet

20V Dual N-Channel MOSFET

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AON3810
20V Dual N-Channel MOSFET
General Description
The AON3810 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Product Summary
VDS (V) = 20V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 28m(VGS = 4.5V)
RDS(ON) < 39m(VGS = 2.5V)
RDS(ON) < 55m(VGS = 1.8V)
ESD Rating: 2000V HBM
Top View
DFN 3x3
Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
8
7
6
5
D2
D2
G1
D1
D1
1.6K
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
8.5
6.8
30
2.5
1.6
-55 to 150
D1
1.6K
G2
S1
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
40
75
30
Max
50
95
40
Units
°C/W
°C/W
°C/W
D2
S2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com




Alpha & Omega Semiconductors

AON3810 Datasheet Preview

AON3810 Datasheet

20V Dual N-Channel MOSFET

No Preview Available !

AON3810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250uA
VGS=4.5V, VDS=5V
VGS=10V, ID=7A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=7A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=1.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs, VGS=-9V
Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs, VGS=-9V
Min
20
±12
0.5
30
16
22
19
25
35
Typ
0.7
20
28
24
32
46
21
0.66
280
105
35
1.6
5.2
2.1
1.9
280
972
2.35
2.2
25
8
Max Units
V
1
5 µA
10
V
1V
A
24
m
35
29 m
39 m
55 m
S
1V
2.5 A
pF
pF
pF
k
nC
nC
nC
ns
ns
µs
µs
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The currentand power rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Part Number AON3810
Description 20V Dual N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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