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AOD4112 - N-Channel MOSFET

General Description

SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Key Features

  • VDS (V) = 30V ID = 20A (V GS = 10V) RDS(ON) < 9.5m Ω (VGS = 10V) RDS(ON) < 14.5m Ω (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested! TO-252 D-PAK Top View Drain Connected to G Tab S G D S D Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current GF Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 20 20 80 25 94 50 25 5.7 3.6 -55 to 175 Unit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRFET AOD4112 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4112 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 20A (V GS = 10V) RDS(ON) < 9.5m Ω (VGS = 10V) RDS(ON) < 14.5m Ω (VGS = 4.