Datasheet4U Logo Datasheet4U.com

AOD4104 - N-Channel MOSFET

General Description

The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suited for use as a low side switch in CPU core power conversion.

TO-252 D-PAK

Key Features

  • VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m Ω (VGS = 20V) RDS(ON) < 4.5m Ω (VGS = 12V) RDS(ON) < 5.4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C.

📥 Download Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOD410 N-Channel MOSFET
AOD4100 N-Channel MOSFET
AOD4102 30V N-Channel MOSFET
AOD4106 N-Channel MOSFET
AOD410L N-Channel MOSFET
AOD4110 N-Channel MOSFET
AOD4112 N-Channel MOSFET
AOD412 N-Channel MOSFET
AOD4120 N-Channel MOSFET
AOD4124 100V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m Ω (VGS = 20V) RDS(ON) < 4.5m Ω (VGS = 12V) RDS(ON) < 5.4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.