AO8808A transistor equivalent, dual n-channel enhancement mode field effect transistor.
VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) ESD Rating: 2000V HBM
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OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & So.
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