AO8801 transistor equivalent, dual p-channel enhancement mode field effect transistor.
VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM
TSSOP-8 Top View D.
It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications). AO8801L is a Green Produ.
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product A.
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