AO5803E datasheet, transistor equivalent, Alpha & Omega Semiconductors

AO5803E transistor equivalent, dual p-channel enhancement mode field effect transistor.

Features and benefits

VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) ESD PROTECTED S1 G1 D2 SC-89-6 D1 G1 G2.

Application

AO5803E and AO5803EL are electrically identical. -RoHS compliant -AO5803EL is Halogen Free Features VDS (V) = -20V ID .

Description

The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO58.

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