AO5600E transistor equivalent, complementary enhancement mode field effect transistor.
n-channel VDS (V) = 20V, ID = 0.6A (VGS=4.5V) RDS(ON)< 0.65Ω (VGS= 4.5V) RDS(ON)< 0.75Ω (VGS= 2.5V) RDS(ON)< 0.95Ω (VGS= 1.8V) p-channel VDS (V) = -20V, ID = -0.5A (VGS=-.
AO5600E and AO5600EL are electrically identical.
-RoHS compliant -AO5600EL is Halogen Free
ESD PROTECTED!
Features
n-ch.
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical.
-RoHS complia.
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