AO5803E
Description
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are electrically identical.
-Ro HS pliant -AO5803EL is Halogen Free
Features
VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V)
ESD PROTECTED
S1 G1
D2
SC-89-6
D1 G1 G2
D1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A, F
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range TJ, TSTG
S1
Maximum -20 ±8 -0.6 -0.4 -3 0.4 0.24
-55 to 150
Thermal...
