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AO4484 - 40V N-Channel MOSFET

General Description

The AO4484 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This is an all purpose device that is suitable for use in a wide range of power conversion applications.

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AO4484 40V N-Channel MOSFET General Description The AO4484 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS (V) = 40V ID = 10A RDS(ON) < 10mΩ RDS(ON) < 12mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR 13.5 10 10.