AO4447 mosfet equivalent, p-channel mosfet.
VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM
The AO4447 uses advanced trench technology to .
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
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VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM
The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate .
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