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AO4444 - N-Channel MOSFET

General Description

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Key Features

  • VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4444 uses advanced trench technology to excellent RDS(ON), body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in 12V buck converters. Standard Product AO4444 is Pb-free (meets ROHS & Sony 259 specifications). AO4444L is a Green Product ordering option. AO4444 and AO4444L are electrically identical. D S S S G D D D D G S SOIC-8 Ab.

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AO4444 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4444 uses advanced trench technology to excellent RDS(ON), body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in 12V buck converters. Standard Product AO4444 is Pb-free (meets ROHS & Sony 259 specifications). AO4444L is a Green Product ordering option. AO4444 and AO4444L are electrically identical.