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AO4443
40V P-Channel MOSFET
General Description
Product Summary
The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V)
100% UIS Tested 100% Rg Tested
-40V -6A < 42mΩ < 63mΩ
Top View D
D
D
D
SOIC-8 Bottom View
G
S S S Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.