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AO3400 - 30V N-Channel MOSFET

Description

The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is suitable for use as a load switch or in PWM applications.

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 5.8A < 28mΩ < 33mΩ < 52mΩ SOT23 Top View Bottom View D D D SG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 5.8 4.9 30 1.4 0.
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