AS4C512M16D3L sdram equivalent, ddr3l sdram.
* VDD = VDDQ = 1.35V (1.283
–1.45V)
* Backward compatible to VDD = VDDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward comp.
* Differential bidirectional data strobe
* 8n-bit prefetch architecture
* Differential clock inputs (CK, CK#.
Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L
– 256 Meg x 4 x 8 banks* AS4C1G8MD3L
– 128 Meg x 8 x 8 banks AS4C512M16D3L
– 64 Meg x 16 x 8 banks
Revision Rev 1.0 Rev 2.0
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