Datasheet4U Logo Datasheet4U.com

AS4C256M16D3LB-12BAN - 4Gb DRAM

Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.

Features

  • - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; center-aligned with data for WRITEs - Differential clock inputs (CK and CK) - DLL aligns DQ and DQS transitions with CK transitions - Commands entered on each positive CK edge.

📥 Download Datasheet

Datasheet Details

Part number AS4C256M16D3LB-12BAN
Manufacturer Alliance Semiconductor
File Size 1.88 MB
Description 4Gb DRAM
Datasheet download datasheet AS4C256M16D3LB-12BAN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AS4C256M16D3LB-12BAN Revision History 4Gb AS4C256M16D3LB - 12BAN 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Mar. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/46 - Rev.1.0 Mar 2018 AS4C256M16D3LB-12BAN Specifications - Density : 4G bits - Organization : 32M words x 16 bits x 8 banks - Package : - 96-ball FBGA - Lead-free (RoHS compliant) and Halogen-free - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Backward compatible to VDD, VDDQ = 1.5V ± 0.
Published: |