z -30V/-5.3A,RDS(ON)=30mΩ@VGS=-10V z -30V/-4.2A,RDS(ON)=40mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum.

Pin Description ( DFN2X2-6L ) AFP2421WS 30V P-Channel Enhancement Mode MOSFET Features z -30V/-5.3A,RDS(ON)=30mΩ@VGS=-.

AFP2421WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFP2415WS

AFP2431WS

AFP2441W

AFP2443W

AFP2125S

AFP2301AS

AFP2303A

AFP2303AS23RG

AFP2307A

AFP2309A

AFP2311

AFP2311A

AFP2317

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