60V/6.8A,RDS(ON)=42mΩ@VGS=10V 60V/5.6A,RDS(ON)=48mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load C.

Pin Description ( SOP-8P ) AFN4946W 60V N-Channel Enhancement Mode MOSFET Features 60V/6.8A,RDS(ON)=42mΩ@VGS=10V 60V/5.

AFN4946W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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