Datasheet4U Logo Datasheet4U.com

MS1337 - RF & MICROWAVE TRANSISTORS

General Description

The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications.

The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.

Key Features

  • 175 MHz.
  • 12.5 VOLTS.
  • POUT = 30W.

📥 Download Datasheet

Datasheet Details

Part number MS1337
Manufacturer Advanced Power Technology
File Size 103.92 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1337 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7069 Rev - 10-2002 Value 36 18 36 4.0 8.