Datasheet4U Logo Datasheet4U.com

MS1329 - RF & MICROWAVE TRANSISTORS

General Description

The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118

136 MHz and 28 V Class C ground station transmitters.

Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.

Key Features

  • 150 MHz.
  • 28 VOLTS.
  • POUT = 60W.
  • GP = 7.0 dB.

📥 Download Datasheet

Datasheet Details

Part number MS1329
Manufacturer Advanced Power Technology
File Size 183.31 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1329 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-Case 053-7067 Rev - 10-2002 Value 65.0 35.0 4.0 75.0 6.