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MS1329 Datasheet, Advanced Power Technology

MS1329 transistors equivalent, rf & microwave transistors.

MS1329 Avg. rating / M : 1.0 rating-11

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MS1329 Datasheet

Features and benefits


* 150 MHz
* 28 VOLTS
* POUT = 60W
* GP = 7.0 dB MINIMUM
* COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor .

Application

Features
* 150 MHz
* 28 VOLTS
* POUT = 60W
* GP = 7.0 dB MINIMUM
* COMMON EMITTER CONFIGURATION DESC.

Description

The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118
  – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation pr.

Image gallery

MS1329 Page 1 MS1329 Page 2 MS1329 Page 3

TAGS

MS1329
MICROWAVE
TRANSISTORS
Advanced Power Technology

Manufacturer


Advanced Power Technology

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